Int’l research team develops damage-free etching technique for optoelectronic semiconductors

An international research team has pioneered a “self-etching” processing technique that allows for the precise manipulation of delicate 2D perovskite semiconductors without damaging their structure. The study, published Thursday in the journal Nature, represents a significant breakthrough in the field of optoelectronic materials.

Led by researchers from the University of Science and Technology of China, Purdue University, and ShanghaiTech University, the team utilized internal crystal stress and a mild chemical solution to induce controlled etching. By filling these etched cavities with different materials, they successfully created high-quality heterojunctions within a single crystal wafer. This method ensures lattice continuity and atomically smooth interfaces, which are essential for high-performance electronics.

This “gentle” strategy avoids the structural damage caused by traditional solvent or ultraviolet treatments. Experts believe this development paves the way for integrating ultra-dense, microscopic light-emitting pixels onto thin materials, potentially revolutionizing the next generation of high-efficiency displays and miniaturized optoelectronic devices.

Credit : CGTN