Chinese researchers create transistors with ultralow power consumption

A team of Chinese researchers has developed the world’s smallest ferroelectric transistor, achieving ultralow power consumption and promising advances in semiconductor technology, according to a study in Science Advances. Led by Qiu Chenguang and Peng Lianmao of Peking University, the team created nano-gate ferroelectric transistors that operate at just 0.6 volts with a gate size of 1 nanometer. This innovation resolves the longstanding voltage mismatch between logic chips, which run at around 0.7 volts, and traditional non-volatile memory, which previously required 5 volts, eliminating the need for complex step-up circuits and reducing energy waste. The new transistors enable seamless, high-speed data transfer between memory and computing units at low voltage, improving energy efficiency in AI chips and other devices. The researchers say the technology is compatible with mainstream ferroelectric materials, mass-producible using standard industrial processes, and could be applied to large-model inference, edge intelligence, wearables, and Internet of Things devices.

Credit : CGTN